(China (Mainland))
Product Summary
The UM5K1N is a 2.5V Drive Nch+Nch MOS FET intended for Small switching (30V, 0.1A).
Parametrics
UM5K1N absolute maximum ratings: (1)Drain-source voltage, VDSS: 30v; (2)Gate-source voltage, VGSS: ±20v; (3)Drain current: ID: ±100mA at Continuous; IDp: ±400mA at Pulsed ; (4)Total power dissipation, PD: 150mW / TOTAL; 120 mW / ELEMENT; (5)Channel temperature, Tch: 150℃; (6)Storage temperature, Tstg: -55 to +150℃.
Features
UM5K1N features: (1)Two 2SK3018 transistors in a single UMT package; (2)Mounting cost and area can be cut in half; (3)Low on-resistance; (4)Low voltage drive (2.5V) makes this device ideal for portable equipment; (5)Drive circuits can be simple.
Diagrams
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Data Sheet |
Negotiable |
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UM5K1NTR |
ROHM Semiconductor |
MOSFET 2N-CH 30V .1A SOT-363 |
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